Current-injected 1.54 m light emitting diodes based on erbium-doped GaN
نویسندگان
چکیده
Current-injected 1.54 m emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 m emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers. © 2008 American Institute of Physics. DOI: 10.1063/1.2955834
منابع مشابه
Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition
Er doped GaN (GaN:Er) p-i-n structures were prepared by metal organic chemical vapor deposition. Effects of growth pressure on the optical performance of GaN:Er p-i-n structures have been investigated. Electroluminescence measurements revealed that the optimal growth pressure window for obtaining strong infrared emission intensity at 1.54 μm is around 20 torr, while the greater amount of Ga vac...
متن کاملOn the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
Related Articles Multilayered graphene anode for blue phosphorescent organic light emitting diodes Appl. Phys. Lett. 100, 133304 (2012) Multilayered graphene anode for blue phosphorescent organic light emitting diodes APL: Org. Electron. Photonics 5, 82 (2012) Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser Appl. Phys. Lett. 100, 13111...
متن کاملErbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition
Erbium doped AlN epilayers (AlN:Er) have been grown by metal organic chemical vapor deposition. The 1.54 μm emission properties were probed by photoluminescence (PL) emission spectroscopy and compared with those of GaN:Er. Optimum intensity of the 1.54 μm emission from AlN:Er was obtained for growth temperature at 1050 °C. It was found that the emission intensity from AlN:Er is higher than that...
متن کاملNear infrared photonic devices based on Er-doped GaN and InGaN
Please cite this article in press as: R. Dahal et a Er-doped III-nitride semiconductors have emerged as very attractive materials to achieve photonic devices with multiple functionalities for photonic integrated circuits (PICs). Optical sources and amplifiers based on these materials, particularly GaN and InGaN alloys, can operate at 1.54 lm and are expected to be temperature insensitive and ha...
متن کاملInfluence of exposure to 980 nm laser radiation on the luminescence of Si: Er/O light-emitting diodes
Erbium ͑Er͒ codoping with oxygen ͑O͒ in Si is a well-known method for producing electroluminescent material radiating at 1.54 m through a 4f shell transition of Er 3+ ions. In this work the influence of exposure to 980 nm radiation on the electroluminescence ͑EL͒ of reverse biased Si:Er/O light-emitting diodes ͑LEDs͒, which give a strong room temperature 1.54 m intensity, is presented and discussed. ...
متن کامل